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16 April 2012 AIMS D2DB simulation for DUV and EUV mask inspection
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Proceedings Volume 8352, 28th European Mask and Lithography Conference; 835209 (2012)
Event: 28th European Mask and Lithography Conference (EMLC 2012), 2012, Dresden, Germany
AIMS™ Die-to-Die (D2D) is widely used in checking the wafer printability of mask defects for DUV lithography. Two AIMS images, a reference and a defect image, are captured and compared with differences larger than certain tolerances identified as real defects. Since two AIMS images are needed, and since AIMS system time is precious, it is desirable to save image search and capture time by simulating reference images from the OPC mask pattern and AIMS optics. This approach is called Die-to-Database (D2DB). Another reason that D2DB is desirable is in single die mask, where the reference image from another die does not exist. This paper presents our approach to simulate AIMS optics and mask 3D effects. Unlike OPC model, whose major concern is predicting printed CD, AIMS D2DB model must produce simulated images that match measured images across the image field. This requires a careful modeling of all effects that impact the final image quality. We present a vector-diffraction theory that is based on solid theoretical foundations and a general formulation of mask model that are applicable to both rigorous Maxwell solver and empirical model that can capture the mask 3D-effects. We demonstrated the validity of our approach by comparing our simulated image with AIMS machine measured images. We also briefly discuss the necessary changes needed to model EUV optics. Simulation is particularly useful while the industry waits for an actinic EUV-AIMS tool.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Danping Peng, Ying Li, Masaki Satake, Peter Hu, Jerry Chen, S. C. Hsu, Rick Lai, C. S. Lin, and Laurent C. C. Tuo "AIMS D2DB simulation for DUV and EUV mask inspection", Proc. SPIE 8352, 28th European Mask and Lithography Conference, 835209 (16 April 2012);

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