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16 April 2012 Through pellicle management of haze formation in a wafer fabrication environment
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Proceedings Volume 8352, 28th European Mask and Lithography Conference; 83520R (2012)
Event: 28th European Mask and Lithography Conference (EMLC 2012), 2012, Dresden, Germany
The haze nucleation and growth phenomenon on critical photomask surfaces has periodically gained attention as it has significantly impacted wafer printability for different technology nodes over the years. A number of process solutions have been shown to suppress or minimize the propensity for haze formation, but none of these technologies has stopped every instance of haze. Additionally, the management of photo-induced defects during lithography exposure is expensive, so some capability will always be needed to remove haze on photomasks for long term maintenance over a mask's lifetime. A novel technology is reviewed here which uses a dry (no chemical effluents) removal system to safely sweep the entire printable region of a pelliclized photomask to eliminate all removable haze. This process is safe regardless of the mask substrate materials or the presence of small critical patterns such as SRAF's that may represent damage problems for traditional cleaning methods. Operational process techniques for this system and performance in removal will be shown for haze located on the mask pattern surface. This paper will also discuss the theory of operation for the system, including expected chemical reactions and address the reformation rate of haze crystals. Data from tool acceptance and preliminary production use will also be reviewed including analysis of process window through a focus-exposure matrix, repair durability, CD performance, and sort yield.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander Figliolini, Michael Archuletta, Jeff LeClaire, David Brinkley, David Doerr, Roy White, Ron Bozak, and David A. Lee "Through pellicle management of haze formation in a wafer fabrication environment", Proc. SPIE 8352, 28th European Mask and Lithography Conference, 83520R (16 April 2012);


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