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31 May 2012 1024 x 1024 LWIR SLS FPAs: status and characterization
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An infrared sensor technology that has made quick progress in recent years is the photodiode based on Type-II InAs/(In)GaSb strained layer superlattices (SLS). We have developed Focal Plane Arrays (FPAs) with up to a million pixels, quantum efficiency exceeding 50%, and cutoff wavelength ~ 10 microns. SLS offers the promise of the high quantum efficiency and operating temperature of longwave infrared mercury cadmium telluride (MCT) at the price point of midwave infrared indium antimonide (InSb). That promise is rapidly being fulfilled. This paper presents the current state-of-the-art of this sensor technology at this critical stage of its evolution.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mani Sundaram, Axel Reisinger, Richard Dennis, Kelly Patnaude, Douglas Burrows, Jason Bundas, Kim Beech, Ross Faska, and Dan Manitakos "1024 x 1024 LWIR SLS FPAs: status and characterization", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83530W (31 May 2012);

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