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31 May 20121024 x 1024 LWIR SLS FPAs: status and characterization
An infrared sensor technology that has made quick progress in recent years is the photodiode based on Type-II
InAs/(In)GaSb strained layer superlattices (SLS). We have developed Focal Plane Arrays (FPAs) with up to a million
pixels, quantum efficiency exceeding 50%, and cutoff wavelength ~ 10 microns. SLS offers the promise of the high
quantum efficiency and operating temperature of longwave infrared mercury cadmium telluride (MCT) at the price point
of midwave infrared indium antimonide (InSb). That promise is rapidly being fulfilled. This paper presents the current
state-of-the-art of this sensor technology at this critical stage of its evolution.
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Mani Sundaram, Axel Reisinger, Richard Dennis, Kelly Patnaude, Douglas Burrows, Jason Bundas, Kim Beech, Ross Faska, Dan Manitakos, "1024 x 1024 LWIR SLS FPAs: status and characterization," Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83530W (31 May 2012); https://doi.org/10.1117/12.923442