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31 May 2012 Electronic transport in InAs/GaSb type-II superlattices for long wavelength infrared focal plane array applications
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Abstract
Electronic transport parameters in a nominally P+/π/P+ InAs/GaSb type-II superlattice vertical photoconductor structure for long-wavelength infrared detectors have been characterized employing magnetic field dependent resistivity and Hall-effect measurements, and high-resolution mobility spectrum analysis. Carrier transport parameters from both the P+ and nominally π regions were obtained over the 80 to 300K temperature range. At 300 K, the minority carrier electrons in the nominally π region was found to be characterized by a mobility and concentration of 11,000 cm2/Vs and 1.1×1017 cm-3, respectively. Taking into account our previously reported room-temperature vertical electron transport parameters,1 the vertical to lateral mobility and carrier concentration ratios have been determined to be 0.19 and 5.5×10-4 , respectively. A miniband energy gap of 192±8 meV was estimated from the thermal activation of the minority carrier electrons in the lightly doped InAs/GaSb superlattice region.
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G. A. Umana-Membreno, H. Kala, B. Klein, J. Antoszewski, N. Gautam, M. N. Kutty, E. Plis, S. Krishna, and L. Faraone "Electronic transport in InAs/GaSb type-II superlattices for long wavelength infrared focal plane array applications", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83530Y (31 May 2012); https://doi.org/10.1117/12.919767
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