Passivation of type II InAs/GaSb superlattice photodetectors with atomic layer deposited Al2O3

Omer Salihoglu; Abdullah Muti; Kutlu Kutluer; Tunay Tansel; Rasit Turan; Coskun Kocabas; Atilla Aydinli

doi:10.1117/12.920406

31 May 2012 Passivation of type II InAs/GaSb superlattice photodetectors with atomic layer deposited Al₂O₃

Omer Salihoglu, Abdullah Muti, Kutlu Kutluer, Tunay Tansel, Rasit Turan, Coskun Kocabas, Atilla Aydinli

Proceedings Volume 8353, Infrared Technology and Applications XXXVIII; 83530Z (2012) https://doi.org/10.1117/12.920406
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al₂O₃) as a passivation layer. Plasma free and low operation temperature with uniform coating of ALD technique leads to a conformal and defect free coverage on the side walls. This conformal coverage of rough surfaces also satisfies dangling bonds more efficiently while eliminating metal oxides in a self cleaning process of the Al₂O₃ layer. Al₂O₃ passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 x 10¹³ Jones, respectively at 4 μm and 77 K. Quantum efficiency (QE) was determined as %41 for these detectors.

Citation Download Citation

Omer Salihoglu, Abdullah Muti, Kutlu Kutluer, Tunay Tansel, Rasit Turan, Coskun Kocabas, and Atilla Aydinli "Passivation of type II InAs/GaSb superlattice photodetectors with atomic layer deposited Al₂O₃", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83530Z (31 May 2012); https://doi.org/10.1117/12.920406

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