Revolutionary development of Type-II GaSb/InAs superlatices for third generation of IR imaging

Manijeh Razeghi; Siamak Abdollahi Pour

doi:10.1117/12.923833

31 May 2012 Revolutionary development of Type-II GaSb/InAs superlatices for third generation of IR imaging

Manijeh Razeghi, Siamak Abdollahi Pour

Proceedings Volume 8353, Infrared Technology and Applications XXXVIII; 835310 (2012) https://doi.org/10.1117/12.923833
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

Recent efforts to improve the performance of Type II InAs/GaSb superlattice photodiodes and focal plane arrays (FPA) have been reviewed. The theoretical bandstructure models have been discussed first. A review of recent developments in growth and characterization techniques is given. The efforts to improve the performance of LWIR photodiodes and the latest result have been reported. The results of both small and large format LWIR FPAs, the latest results to elevate the operating temperature of MWIR photodiodes and FPAs, the latest results of two color FPAs, the results of novel minority unipolar devices (pMp) and finally the results of photodiode and FPA fabrication on GaAs substrates are reviewed.

Citation Download Citation

Manijeh Razeghi and Siamak Abdollahi Pour "Revolutionary development of Type-II GaSb/InAs superlatices for third generation of IR imaging", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 835310 (31 May 2012); https://doi.org/10.1117/12.923833

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