Laser power and temperature dependence on laser beam induced current signal in As-doped p-type HgCdTe

Yongguo Chen; Weida Hu; Xiaoshuang Chen; Zhenhua Ye; Jun Wang; Chun Lin; Xiaoning Hu; Wei Lu

doi:10.1117/12.918806

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31 May 2012 Laser power and temperature dependence on laser beam induced current signal in As-doped p-type HgCdTe

Yongguo Chen, Weida Hu, Xiaoshuang Chen, Zhenhua Ye, Jun Wang, Chun Lin, Xiaoning Hu, Wei Lu

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Proceedings Volume 8353, Infrared Technology and Applications XXXVIII; 83532S (2012) https://doi.org/10.1117/12.918806
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

The polarity inversion of laser beam induced current (LBIC) signal at low temperature and high laser power density in As-doped p-type HgCdTe is investigated in this paper. It is found that the polarity of LBIC signal reverses at 87 K compared to that at 300 K and the high laser power density is also an important factor in inducing the LBIC signal reverse. The results demonstrate that the shape of the LBIC signal profile is strongly dependent on the temperature of the device and the laser irradiation. To provide a reasonable analysis for this interesting fact, a photocarrier spreading mode is presented in this paper.

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Yongguo Chen, Weida Hu, Xiaoshuang Chen, Zhenhua Ye, Jun Wang, Chun Lin, Xiaoning Hu, and Wei Lu "Laser power and temperature dependence on laser beam induced current signal in As-doped p-type HgCdTe", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 83532S (31 May 2012); https://doi.org/10.1117/12.918806

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