Paper
31 May 2012 MWIR InAs1-xSbx nCBn detectors data and analysis
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Abstract
In InAs1-xSbx material alloy composition was adjusted to achieve 200K cutoff wavelengths in the 5 μm range. Reflectance was minimized and absorption in the InAs1-xSbx material maximized by the use of pyramid shaped structures fabricated in the InAs1-xSbx material which function as an AR coating. Compound-barrier (CB) detectors were fabricated and tested for optical response and dark current density versus bias measurements were acquired as a function of temperature. For 5 μm cutoff detectors, QE is high, ~ 75 % between 4.0 μm and 4.6 μm and > 80 % between 2.0 μand 4.0 μm, demonstrating the efficacy of the pyramids as photon trap structures and as a replacement for multi-layer AR-coatings. Jdark in the low 10-3 A/cm2 range at 200 K and low 10-5 A/cm2 range at 150 K was measured at the bias at which the QE peaked.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. I. D'Souza, E. Robinson, A. C. Ionescu, D. Okerlund, T. J. de Lyon, R. D. Rajavel, H. Sharifi, D. Yap, N. Dhar, P. S. Wijewarnasuriya, and C. Grein "MWIR InAs1-xSbx nCBn detectors data and analysis", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 835333 (31 May 2012); https://doi.org/10.1117/12.920495
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Cited by 11 scholarly publications.
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KEYWORDS
Sensors

Quantum efficiency

Diffusion

Mid-IR

Temperature metrology

Optical fabrication

Absorption

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