MWIR InAs1-xSbx nCBn detectors data and analysis

A. I. D'Souza; E. Robinson; A. C. Ionescu; D. Okerlund; T. J. de Lyon; R. D. Rajavel; H. Sharifi; D. Yap; N. Dhar; P. S. Wijewarnasuriya; C. Grein

doi:10.1117/12.920495

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31 May 2012 MWIR InAs_1-xSb_x nCBn detectors data and analysis

A. I. D'Souza, E. Robinson, A. C. Ionescu, D. Okerlund, T. J. de Lyon, R. D. Rajavel, H. Sharifi, D. Yap, N. Dhar, P. S. Wijewarnasuriya, C. Grein

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Proceedings Volume 8353, Infrared Technology and Applications XXXVIII; 835333 (2012) https://doi.org/10.1117/12.920495
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

In InAs_1-xSb_x material alloy composition was adjusted to achieve 200K cutoff wavelengths in the 5 μm range. Reflectance was minimized and absorption in the InAs_1-xSb_x material maximized by the use of pyramid shaped structures fabricated in the InAs_1-xSb_x material which function as an AR coating. Compound-barrier (CB) detectors were fabricated and tested for optical response and dark current density versus bias measurements were acquired as a function of temperature. For 5 μm cutoff detectors, QE is high, ~ 75 % between 4.0 μm and 4.6 μm and > 80 % between 2.0 μand 4.0 μm, demonstrating the efficacy of the pyramids as photon trap structures and as a replacement for multi-layer AR-coatings. J_dark in the low 10^-3 A/cm² range at 200 K and low 10^-5 A/cm² range at 150 K was measured at the bias at which the QE peaked.

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A. I. D'Souza, E. Robinson, A. C. Ionescu, D. Okerlund, T. J. de Lyon, R. D. Rajavel, H. Sharifi, D. Yap, N. Dhar, P. S. Wijewarnasuriya, and C. Grein "MWIR InAs_1-xSb_x nCBn detectors data and analysis", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 835333 (31 May 2012); https://doi.org/10.1117/12.920495

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