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31 May 2012 MWIR InAs1-xSbx nCBn detectors data and analysis
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In InAs1-xSbx material alloy composition was adjusted to achieve 200K cutoff wavelengths in the 5 μm range. Reflectance was minimized and absorption in the InAs1-xSbx material maximized by the use of pyramid shaped structures fabricated in the InAs1-xSbx material which function as an AR coating. Compound-barrier (CB) detectors were fabricated and tested for optical response and dark current density versus bias measurements were acquired as a function of temperature. For 5 μm cutoff detectors, QE is high, ~ 75 % between 4.0 μm and 4.6 μm and > 80 % between 2.0 μand 4.0 μm, demonstrating the efficacy of the pyramids as photon trap structures and as a replacement for multi-layer AR-coatings. Jdark in the low 10-3 A/cm2 range at 200 K and low 10-5 A/cm2 range at 150 K was measured at the bias at which the QE peaked.
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A. I. D'Souza, E. Robinson, A. C. Ionescu, D. Okerlund, T. J. de Lyon, R. D. Rajavel, H. Sharifi, D. Yap, N. Dhar, P. S. Wijewarnasuriya, and C. Grein "MWIR InAs1-xSbx nCBn detectors data and analysis", Proc. SPIE 8353, Infrared Technology and Applications XXXVIII, 835333 (31 May 2012);

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