Graphene-based field-effect transistor structures for terahertz applications

Ahmad Abbas; Mustafa Karabiyik; Nezih Pala

doi:10.1117/12.919460

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9 May 2012 Graphene-based field-effect transistor structures for terahertz applications

Ahmad Abbas, Mustafa Karabiyik, Nezih Pala

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Proceedings Volume 8363, Terahertz Physics, Devices, and Systems VI: Advanced Applications in Industry and Defense; 83630S (2012) https://doi.org/10.1117/12.919460
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

We propose Terahertz (THz) plasmonic devices based on linearly integrated FETs (LFETs) on Graphene. LFET structures are advantageous for (THz) detection since the coupling between the THz radiation and the plasma wave is strongly enhanced over the single gate devices and accordingly higher-order plasma resonances become possible. AlGaN/GaN heterostructure LFETs with their high sheet carrier concentration and high electron mobility are promising for plasmonic THz detection. Nevertheless, our numerical studies show that room temperature resonant absorption of THz radiation by the plasmons in AlGaN/GaN LFETs is very weak even if the integration density is sufficiently large. Our simulations also demonstrate that similar LFETs on Graphene, which has very large electron mobility, can resonantly absorb THz radiation up to 5th harmonic at room temperature. Additionally, we investigated LFETs with integrated cavities on Graphene. Such Periodic Cavity LFETs substantially enhance the quality factor of the resonant modes.

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Ahmad Abbas, Mustafa Karabiyik, and Nezih Pala "Graphene-based field-effect transistor structures for terahertz applications", Proc. SPIE 8363, Terahertz Physics, Devices, and Systems VI: Advanced Applications in Industry and Defense, 83630S (9 May 2012); https://doi.org/10.1117/12.919460

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