Ultraviolet photodetectors based on ZnO nanostructures

Fawen Guo; Jinsong Huang

doi:10.1117/12.918340

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21 May 2012 Ultraviolet photodetectors based on ZnO nanostructures

Fawen Guo, Jinsong Huang

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Proceedings Volume 8373, Micro- and Nanotechnology Sensors, Systems, and Applications IV; 83732K (2012) https://doi.org/10.1117/12.918340
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

Ultraviolet photodetectors have attracted increasing attention due to its widespread use in civilian and military fields in the past decades. Many kinds of inorganic and organic materials have been used for UV photodetectors so far. ZnO is one of the most prominent semiconductors among them, because it has a wide-band-gap of ~3.35 eV and a large exciton binding energy of 60 meV. As for ZnO nanostructures, they play important roles in developing UV photodetectors. It is fair to state that ZnO nanostructures are probably the most important nanostructures that present excellent performance in photodetectors. In this review, we will describe state-of-the-arts UV photodetectors based on ZnO nanostructures and our recent progress on highly sensitive ZnO hybrid UV photodetector with specific detectivity up to 3.4 ×10¹⁵ Jones.

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Fawen Guo and Jinsong Huang "Ultraviolet photodetectors based on ZnO nanostructures", Proc. SPIE 8373, Micro- and Nanotechnology Sensors, Systems, and Applications IV, 83732K (21 May 2012); https://doi.org/10.1117/12.918340

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