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17 May 2012High-performance interband cascade lasers emitting between 3.3 and 3.5 microns
Semiconductor laser performance in the 3 to 4 micron wavelength region has lagged behind lasers at longer and shorter
wavelengths. However, recent advances by the group at the Naval Research Laboratory (NRL) have markedly changed
this situation, and in a recent collaboration with the NRL group, we demonstrated high performance interband cascade
lasers at 3.8 microns. In this work, we present results extending this earlier work to shorter wavelengths. In particular, we
designed four new interband cascade lasers at target wavelengths between 3.3 and 3.5 microns. Initial testing of broad
area devices show threshold current densities of ~230 A/cm2 at 300K, almost a factor of two lower than the ~425 A/cm2
results obtained on the broad area devices at 3.8 microns. In this paper, we present performance data on these broad area
lasers and also data on narrow ridge devices fabricated from the same material.
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J. D. Bruno, R. P. Leavitt, J. L. Bradshaw, K. M. Lascola, J. T. Pham, F. J. Towner, "High-performance interband cascade lasers emitting between 3.3 and 3.5 microns," Proc. SPIE 8374, Next-Generation Spectroscopic Technologies V, 83740L (17 May 2012); https://doi.org/10.1117/12.919346