Lateral epitaxial overgrowth of ZnO films on a seed layer buffered MgAl2O4 substrate in water

Y. B. Zhang; S. Li; G. K. L. Goh

doi:10.1117/12.923034

2 April 2012 Lateral epitaxial overgrowth of ZnO films on a seed layer buffered MgAl₂O₄ substrate in water

Y. B. Zhang, S. Li, G. K. L. Goh

Proceedings Volume 8409, Third International Conference on Smart Materials and Nanotechnology in Engineering; 84090P (2012) https://doi.org/10.1117/12.923034
Event: Third International Conference on Smart Materials and Nanotechnology in Engineering, 2011, Shenzhen, China

Abstract

ZnO films with exceptional homogeneity and surface smoothness have been hydrothermally grown by using lateral epitaxial overgrowth (LEO). A thin ZnO seed layer film was beforehand grown in water at 90°C on a MgAl₂O₄ (111) substrate as a buffer layer. The LEO method using a mask with an optimized ratio of window to wing was then employed to reduce threading dislocations at the boundaries of crystal mosaic in the epitaxial films. The dislocations arose from unmasked window and coalescence of masked wings while they were seldom present in the wing area. The average dislocation density significantly reduced from 1.4 x 10⁹ to 2.3 x 10⁸ cm^-2 via the LEO. However, it decreased slightly to 1 x 10⁸ cm^-2 after a double LEO applied for further dislocation reduction since new threading dislocations were produced at the coalescence of wings from the LEO.

Citation Download Citation

Y. B. Zhang, S. Li, and G. K. L. Goh "Lateral epitaxial overgrowth of ZnO films on a seed layer buffered MgAl₂O₄ substrate in water", Proc. SPIE 8409, Third International Conference on Smart Materials and Nanotechnology in Engineering, 84090P (2 April 2012); https://doi.org/10.1117/12.923034

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