Calculation of the optical constants of amorphous [(As2S3):(As2Se3)]1-x: Snx thin films

O. V. Iaseniuc

doi:10.1117/12.954163

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1 November 2012 Calculation of the optical constants of amorphous [(As₂S₃):(As₂Se₃)]_1-x: Sn_x thin films

O. V. Iaseniuc

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Proceedings Volume 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI; 84110K (2012) https://doi.org/10.1117/12.954163
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2012, 2012, Constanta, Romania

Abstract

The modifications of optical parameters (optical band gap E_g, absorption coefficient α, refractive index n) under light irradiation by He-Ne laser of the amorphous thin films with different amount of Sn were measured and calculated. In the present work the transmission spectra of bulk and thin films of [(As₂S₃)_0.5:(As₂Se₃)_0.5]_1-x:Sn_x(x=0; 1; 2 at.%) in the visible and middle infrared (IR) regions were studied. The red shift of the fundamental absorption edge under light exposure was observed, and the values of the optical band gap E_g ^optfrom the graphics in Tauc coordinates (α hν)^1/2=A(hν - Eg) were obtained. The dispersion of the refractive index was examined. The relaxation of the relative optical transmission T/T₀=f(t) under the light exposure (λ=633nm and λ=543nm) for amorphous [(As₂S₃)_0.5:(As₂Se₃)_0.5]_1-x:Sn_x thin films also was investigated. The relaxation curves of photodarkening under light irradiation were processing using the stretched exponential presentation of the data: T(t)/T(0) = A₀+Aexp[-(t-t₀)/τ] ^(1-β), where t is the exposure time, τ is the apparent time constant, A characterizes the exponent amplitude, t₀ and A₀ are the initial coordinates, and β is the dispersion parameter (0<β<1).

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O. V. Iaseniuc "Calculation of the optical constants of amorphous [(As₂S₃):(As₂Se₃)]_1-x: Sn_x thin films", Proc. SPIE 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI, 84110K (1 November 2012); https://doi.org/10.1117/12.954163

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