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1 November 2012Calculation of the optical constants of amorphous [(As2S3):(As2Se3)]1-x: Snx thin films
The modifications of optical parameters (optical band gap Eg, absorption coefficient α, refractive index n) under light
irradiation by He-Ne laser of the amorphous thin films with different amount of Sn were measured and calculated. In the
present work the transmission spectra of bulk and thin films of [(As2S3)0.5:(As2Se3)0.5]1-x:Snx (x=0; 1; 2 at.%) in the
visible and middle infrared (IR) regions were studied. The red shift of the fundamental absorption edge under light
exposure was observed, and the values of the optical band gap Egopt from the graphics in Tauc coordinates (α hν)1/2=A(hν -
Eg) were obtained. The dispersion of the refractive index was examined. The relaxation of the relative optical
transmission T/T0=f(t) under the light exposure (λ=633nm and λ=543nm) for amorphous [(As2S3)0.5:(As2Se3)0.5]1-x:Snx thin films also was investigated. The relaxation curves of photodarkening under light irradiation were processing using
the stretched exponential presentation of the data: T(t)/T(0) = A0+Aexp[-(t-t0)/τ] (1-β), where t is the exposure time, τ is the
apparent time constant, A characterizes the exponent amplitude, t0 and A0 are the initial coordinates, and β is the
dispersion parameter (0<β<1).
O. V. Iaseniuc
"Calculation of the optical constants of amorphous [(As2S3):(As2Se3)]1-x: Snx thin films", Proc. SPIE 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI, 84110K (1 November 2012); https://doi.org/10.1117/12.954163
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O. V. Iaseniuc, "Calculation of the optical constants of amorphous [(As2S3):(As2Se3)]1-x: Snx thin films," Proc. SPIE 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI, 84110K (1 November 2012); https://doi.org/10.1117/12.954163