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1 November 2012 Comparison of various structures of CMOS photodiodes in terms of dark current, photocurrent, and quantum efficiency
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Proceedings Volume 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI; 84111C (2012) https://doi.org/10.1117/12.966388
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2012, 2012, Constanta, Romania
Abstract
Until now, very few systematic studies have been made for comparing various photodiode structures in terms of their performance characteristics. Most of the studies included only few structures, some of them only simulated, without experimental measurements. Unfortunately, all these studies comprised only a few photodiodes, and in our knowledge there is no extended study to compare all types of CMOS photodiodes, fabricated using various CMOS processes. In this paper we will try to fill in this empty space in this area, in order to provide an easier choice of the most appropriate CMOS photodiode (and thus of the CMOS image sensor) to be used in a certain application, according to the desired characteristics for each situation. We will review some important studies in which essential parameters for the characterization of the CMOS photodiode were evaluated: quantum efficiency, photocurrent and dark current. We consider that this paper will provide a useful reference for choosing the most suitable photodiode and CMOS image sensor for a very large area of applications.
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Andrei Drӑgulinescu "Comparison of various structures of CMOS photodiodes in terms of dark current, photocurrent, and quantum efficiency", Proc. SPIE 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI, 84111C (1 November 2012); https://doi.org/10.1117/12.966388
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