Paper
1 November 2012 Synthesis and optical properties of Ni doped SnO2 films
S. Mihaiu, I. Atkinson, M. Gartner, M. Anastasescu, E. Manea, M. Zaharescu
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Proceedings Volume 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI; 84111R (2012) https://doi.org/10.1117/12.966406
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2012, 2012, Constanta, Romania
Abstract
Nickel doped SnO2 films with special optical, electrical and magnetic properties have attracted more attention for practical spintronic applications. The present work aims to obtain Ni doped SnO2 films deposited on the glass and silicon substrates by sol-gel method. The as-prepared films and thermally treated ones (at 500°C for 1h) were characterized by Scanning Electron Microscopy (SEM), Spectroscopic Ellipsometry (SE) and UV-VIS transmittance measurements. The obtained films are amorphous according to X-ray diffraction patterns. After three layer depositions, similar film thickness were obtained (around 200 nm), on both type of substrate used. The influence of the substrates and number of depositions on the structural and optical properties of the Ni doped SnO2 films was established.
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S. Mihaiu, I. Atkinson, M. Gartner, M. Anastasescu, E. Manea, and M. Zaharescu "Synthesis and optical properties of Ni doped SnO2 films", Proc. SPIE 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI, 84111R (1 November 2012); https://doi.org/10.1117/12.966406
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Cited by 2 scholarly publications.
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KEYWORDS
Silicon films

Silicon

Nickel

Glasses

Scanning electron microscopy

Semiconducting wafers

Sol-gels

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