Influence of substrate rotating on the microstructure and surface morphology of Ge and Si thin films

Haihan Luo; Dingquan Liu; Xin Yin

doi:10.1117/12.971477

16 October 2012 Influence of substrate rotating on the microstructure and surface morphology of Ge and Si thin films

Haihan Luo, Dingquan Liu, Xin Yin

Proceedings Volume 8416, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 84160V (2012) https://doi.org/10.1117/12.971477
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

The influence of substrate rotating on the microstructure and surface morphology has been investigated on Ge and Si film. In this paper, the Ge and Si optical thin films were chosen to be research objects. The thin films were prepared on Al₂O₃ substrate by electron beam evaporation in about 5×10_-4 Pa vacuum pressure in two deposited methods: rotating substrate and not rotating substrate. The films were observed and analyzed by X-ray diffraction analyzer, scanning electron microscopy and atomic force microscopy. According to the wavelength deviation dispersion theory, the packing density has been calculated. The results show that: in the two deposition methods, the films both are non-crystalline state and compact, the film surface morphology is basically same and no significant defference in surface roughness, but the film on no rotating substrate has higher packing density.

Citation Download Citation

Haihan Luo, Dingquan Liu, and Xin Yin "Influence of substrate rotating on the microstructure and surface morphology of Ge and Si thin films", Proc. SPIE 8416, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 84160V (16 October 2012); https://doi.org/10.1117/12.971477

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