Study on ICP dry etching of GaSb and InAs/GaSb super lattices

Xiangfeng Zhang; Lixue Zhang; Hongfei Zhang; Liang Zhang; Jiaxin Ding; Guansheng Yao; Lei Zhang; Xiaolei Zhang; Liwen Wang; Zhenyu Peng

doi:10.1117/12.978177

15 October 2012 Study on ICP dry etching of GaSb and InAs/GaSb super lattices

Xiangfeng Zhang, Lixue Zhang, Hongfei Zhang, Liang Zhang, Jiaxin Ding, Guansheng Yao, Lei Zhang, Xiaolei Zhang, Liwen Wang, Zhenyu Peng

Author Affiliations +

Proceedings Volume 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy; 84191C (2012) https://doi.org/10.1117/12.978177
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

Inductively coupled plasma (ICP) etching of GaSb and InAs/GaSb super lattices were performed using Cl₂/Ar plasma. The effects of GaSb of etching time, Cl₂: Ar ratio and RF power on etching rates were investigated. It is found that the etching rates were relatively low when etch time was less than 2 min, After etching for 3 min, the etching rates was about 1.3 μm/min as a result of constant, also, the etching rate was increased monotonically with the increasing of Cl₂ proportion, and reaches at 4.14 μm/min when the Cl₂ concentration is 80%. In contrast, the peak value of etching rate of InAs/GaSb super lattices is 1.37 μm/min and the increase extent of etching rates of InAs/GaSb super lattices was much lower than that of GaSb, mainly owing to the insensitivity of InAs to the Cl₂ concentration. In addition, the etching rates of GaSb increased slowly with the increasing of RF power, which indicated the less efficiency influence of RF power on etching rate. The surface morphology of etched InAs/GaSb super lattices was characterized by WYKO HD3300 head measurement system, which suggested that the surface morphology was becoming rough with the increase of Cl₂ percentage. When the concentration reaches 60%, the surface morphology was unacceptable. The results showed that contrast to wet chemical etching, dry etching can form smoother pattern, which indicates the promising application in fabricating fine devices.

Citation Download Citation

Xiangfeng Zhang, Lixue Zhang, Hongfei Zhang, Liang Zhang, Jiaxin Ding, Guansheng Yao, Lei Zhang, Xiaolei Zhang, Liwen Wang, and Zhenyu Peng "Study on ICP dry etching of GaSb and InAs/GaSb super lattices", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191C (15 October 2012); https://doi.org/10.1117/12.978177

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Etching

Gallium antimonide

Superlattices

Dry etching

Wet etching

Laser sintering

Plasma

Show All Keywords

Keywords/Phrases

Search In:

Publication Years