Ohmic contact and electrical property in InAs/GaSb superlattice material

Liang Zhang; Xiaolei Zhang; Lei Zhang

doi:10.1117/12.977228

15 October 2012 Ohmic contact and electrical property in InAs/GaSb superlattice material

Liang Zhang, Xiaolei Zhang, Lei Zhang

Proceedings Volume 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy; 84192V (2012) https://doi.org/10.1117/12.977228
Event: 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012), 2012, Xiamen, China

Abstract

InAs/GaSb superlattice material was grown on GaAs substrates by Molecular-beam epitaxy(MBE). To study the Ohmic contact and electrical property of InAs/GaSb superlattices, the Au//Ti/InAs/GaSb superlattices contact was fabricated using heated electron evaporation methods on the surface of InAs/GaSb superlattices. The Au//Ti/InAs/GaSb superlattices contact character was analyzed by transmission line model. The results show that Au//Ti/InAs/GaSb superlattices contact is the Ohmic contact with good contact resistivity. And it meets requirement of Ohmic contact with the perfect quality. The electrical properties of InAs/GaSb superlattices were tested by Van Der Pauw. That means the leak current decrease as the carriers density reaches to a lower level. At the meantime, the detector obtains a better background noise and energy resolution.

Citation Download Citation

Liang Zhang, Xiaolei Zhang, and Lei Zhang "Ohmic contact and electrical property in InAs/GaSb superlattice material", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84192V (15 October 2012); https://doi.org/10.1117/12.977228

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