Full wafer metrology for chemically graded thin films

Marc Jobin; Stéphane Jotterand; Cédric Pellodi; Sergio dos Santos; Cosmin Silviu Sandu; Estelle Wagner; Giacomo Benvenuti

doi:10.1117/12.922652

9 May 2012 Full wafer metrology for chemically graded thin films

Marc Jobin, Stéphane Jotterand, Cédric Pellodi, Sergio dos Santos, Cosmin Silviu Sandu, Estelle Wagner, Giacomo Benvenuti

Author Affiliations +

Proceedings Volume 8430, Optical Micro- and Nanometrology IV; 843009 (2012) https://doi.org/10.1117/12.922652
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

Combinatorial CBVD (Chemical Beam Vapor Deposition) is a thin film deposition technology which has the ability to produce multi-element thin films with large controlled composition spread gradients. If functional characterizations can be carried out systematically and rapidly on such graded films over full wafers, they enable to identify precisely the best film composition for a given application, and CBVD then easily allows for the deposition of the optimized film homogeneously on large wafers. In this article, we demonstrate the efficiency of such a process development based on the optimization of new Transparent Conductive Oxide thin films (TCO) of few % Nb doped TiO₂. We have developed a full wafer metrology instrument which maps the optical thickness and the sheet resistance with a lateral resolution below 400um. We discuss the performance of various algorithms to extract the optical thickness from the white light reflectance measurement in the case of very small thickness. The sheet resistance is measured with an array of four AFM-like conductive cantilevers, allowing accurate sheet resistance (R) measurement where the standard tungsten four probes destroy porous thin oxide films. Application of these measurements to several Nb doped TiO₂ films deposited on 4" wafer by CBVD is presented.

Citation Download Citation

Marc Jobin, Stéphane Jotterand, Cédric Pellodi, Sergio dos Santos, Cosmin Silviu Sandu, Estelle Wagner, and Giacomo Benvenuti "Full wafer metrology for chemically graded thin films", Proc. SPIE 8430, Optical Micro- and Nanometrology IV, 843009 (9 May 2012); https://doi.org/10.1117/12.922652

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