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8 May 2012 40Gbit/s germanium waveguide photodetector on silicon
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Abstract
We report a Germanium lateral pin photodiode integrated with selective epitaxy at the end of silicon waveguide. A very high optical bandwidth estimated at 120GHz is shown, with internal responsivity as high as 0.8A/W at 1550nm wavelength. Open eye diagram at 40Gb/s was obtained under zero-bias at wavelength of 1.55μm.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Léopold Virot, Laurent Vivien, Andreas Polzer, Delphine Marris-Morini, Johann Osmond, Jean Michel Hartmann, Paul Crozat, Eric Cassan, Charles Baudot, Christophe Kopp, Frédéric Boeuf, Horst Zimmermann, and Jean Marc Fédéli "40Gbit/s germanium waveguide photodetector on silicon", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84310A (8 May 2012); https://doi.org/10.1117/12.923854
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