Translator Disclaimer
11 May 2012 A photo-sensor on thin polysilicon membrane embedded in wafer level package LED
Author Affiliations +
A wafer level packaging LED with photo-sensor which is fabricated on thin poly-silicon membrane located on the corner of silicon cavity is presented in this paper. The wafer substrate was fabricated with (100) orientation silicon wafer and a cavity was etched on the top of the wafer with wet chemical anisotropic etching process for mounting a LED chip. A thin polysilicon membrane was fabricated on the corner of the cavity and a MSM (Metal Semiconductor Metal) type photo-sensor was fabricated on the thin polysilicon membrane. The photo-sensor fabrication and LED packaging were completed on wafer level. The embedded photo-sensor in a wafer level packaging LED is designed to measure light intensity of a LED. The membrane structure photo-sensor can sense the light of the mounted LED directly, so it can measure accurate light intensity of the wafer level packing LED.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin Kwan Kim and Hee Chul Lee "A photo-sensor on thin polysilicon membrane embedded in wafer level package LED", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 843121 (11 May 2012);


Stress analysis of a standard CMOS process
Proceedings of SPIE (September 29 1999)
Packaged Au-PPy valves for drug delivery systems
Proceedings of SPIE (March 22 2006)
A new golden bump making method for high power LED...
Proceedings of SPIE (November 20 2007)
Tunneling tip protection for a bulk micromachined accelerometer
Proceedings of SPIE (September 19 1995)
Microriblets for drag reduction
Proceedings of SPIE (May 26 1995)

Back to Top