High quality factor dielectric multilayer structures fabricated by rf-sputtering

Alessandro Chiasera; Sreeramulu Valligatla; Stefano Varas; Nicola Bazzanella; D. Narayana Rao; Giancarlo C. Righini; Maurizio Ferrari

doi:10.1117/12.921695

10 May 2012 High quality factor dielectric multilayer structures fabricated by rf-sputtering

Alessandro Chiasera, Sreeramulu Valligatla, Stefano Varas, Nicola Bazzanella, D. Narayana Rao, Giancarlo C. Righini, Maurizio Ferrari

Author Affiliations +

Proceedings Volume 8431, Silicon Photonics and Photonic Integrated Circuits III; 843127 (2012) https://doi.org/10.1117/12.921695
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

Rare earth activated 1-D photonic crystals were fabricated by rf-sputtering technique. The cavity is constituted by an Er³⁺-doped SiO₂ active layer inserted between two Bragg reflectors consisting of ten pairs of SiO₂/TiO₂ layers. SEM microscopy is employed to put in evidence the quality of the sample, the homogeneities of the layers thicknes and the good adhesion. NIR transmittance and variable angle reflectance spectra confirm that the presence of a stop-band from 1500 nm to 2000 nm with a cavity resonance centered at 1749 nm at 0° with a quality factor Q is about 890. The influence of the cavity on the ⁴I_13/2 → ⁴I_15/2 emission band of Er³⁺ ion is also demonstrated.

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Alessandro Chiasera, Sreeramulu Valligatla, Stefano Varas, Nicola Bazzanella, D. Narayana Rao, Giancarlo C. Righini, and Maurizio Ferrari "High quality factor dielectric multilayer structures fabricated by rf-sputtering", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 843127 (10 May 2012); https://doi.org/10.1117/12.921695

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