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2 May 2012 Influence of texture modifications in silicon solar cells on absorption in the intrinsic layers
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Abstract
The influence of the front texture of an etched transparent conductive oxide with crater-like structures of various sizes on the absorption of a thin amorphous silicon (a-Si:H) layer is investigated by rigorous optical simulations as part of two simplified systems: A simplified single junction device, using a perfect metal as back contact and a top cell of an amorphous/microcrystalline silicon tandem device, using a microcrystalline silicon halfspace adjacent to the amorphous layer. The texture is modified by stretching either in height or laterally and the average absorption in the a-Si:H layer is investigated relative to the original structure. We investigate the average absorption for each wavelength as well as the total absorption, weighted with an AM1.5g spectrum. Furthermore, the local absorption distribution inside the a-Si:H layer is examined to improve the understanding of local texture features and their influence on absorption and cell performance. For both modifications, an optimal point can be found to improve the absorption in the amorphous layer by up to 15% and 6% for a simplified single junction and tandem top cell, respectively. In case of the top cell of the simplified tandem device, it is found that additionally, the transmission into the microcrystalline silicon can be improved. Also, the local absorption distribution shows that there is an optimal size of the surface craters for all modifications, while steeper crater rims in general lead to higher absorption.
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M. Ermes, K. Bittkau, and R. Carius "Influence of texture modifications in silicon solar cells on absorption in the intrinsic layers", Proc. SPIE 8438, Photonics for Solar Energy Systems IV, 84380I (2 May 2012); https://doi.org/10.1117/12.922204
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