Paper
9 May 2012 Air-bridge high-speed InGaAs/InP waveguide photodiode
H. Yang, C. L. L. M. Daunt, W. Han, K. Thomas, B. Corbett, F. H. Peters
Author Affiliations +
Abstract
The photodiode (PD) is a key component in optical transmission and optical measurement systems which receive optical signals and convert them into electric signals. High speed, high responsivity, high power and low dark current are desirable attributes of the PD in these applications, but also a simple fabrication process for high yield and low cost is essential for industry production. In this paper, an undercut-air-bridge high speed InGaAs/InP PIN structural photodiode is presented. By utilizing the crystal orientation dependent wet etching of InP material and designing the arms of the bridge with proper angle, the air bridge was easily obtained, which greatly eased the fabrication. The fabricated devices with 120μm×3μm ridge waveguides work robustly up to 30GHz in the measurements and potentially faster with optimized material.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Yang, C. L. L. M. Daunt, W. Han, K. Thomas, B. Corbett, and F. H. Peters "Air-bridge high-speed InGaAs/InP waveguide photodiode", Proc. SPIE 8439, Optical Sensing and Detection II, 843925 (9 May 2012); https://doi.org/10.1117/12.922363
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KEYWORDS
Bridges

Waveguides

Metals

Photodiodes

Palladium

Wet etching

Etching

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