Interplay of three-dimensional profile change and CD variation in 193-nm advanced binary photomasks

Yun-Yue Lin; Sean Su; Wen-Chang Hsush; Ta-Cheng Lien; Jia-Jen Chen; Shin-Chang Lee; Anthony Yen

doi:10.1117/12.964411

29 June 2012 Interplay of three-dimensional profile change and CD variation in 193-nm advanced binary photomasks

Yun-Yue Lin, Sean Su, Wen-Chang Hsush, Ta-Cheng Lien, Jia-Jen Chen, Shin-Chang Lee, Anthony Yen

Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 844102 (2012) https://doi.org/10.1117/12.964411
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan

Abstract

In this study, the relationship between the depth profile of features and critical dimension (CD) deviation on MoSi binary photomasks is comprehensively investigated using 3D atomic force microscopy (3D-AFM) and aerial image metrology system (AIMS). Detailed profile description based on various surface analysis techniques, was performed to reconstruct the profile at various stages of the mask fabrication process. It is found that profile change and sidewall byproduct formation are strongly correlated with the etching environment, wet cleaning, and post-treatment. These process-induced profile changes subsequently lead to wafer CD change which can be verified by deviation in AIMS and CDSEM measurements. Visualization of these 3D profile and morphology change clearly reveals that etching gas control forms an outer layer, to enhance etch selectivity, film strength, and immunity to the mask cleaning process. Our finding provides a direction for optimizing advanced photomask materials and processing.

Citation Download Citation

Yun-Yue Lin, Sean Su, Wen-Chang Hsush, Ta-Cheng Lien, Jia-Jen Chen, Shin-Chang Lee, and Anthony Yen "Interplay of three-dimensional profile change and CD variation in 193-nm advanced binary photomasks", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844102 (29 June 2012); https://doi.org/10.1117/12.964411

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