New development system for EUV mask

Masatoshi Terayama; Hideaki Sakurai; Mari Sakai; Masamitsu Itoh; Hideo Funakoshi; Hideaki Iwasaka; Junko Iizuka; Mitsuaki Maruyama; Naoya Hayashi

doi:10.1117/12.979645

29 June 2012 New development system for EUV mask

Masatoshi Terayama, Hideaki Sakurai, Mari Sakai, Masamitsu Itoh, Hideo Funakoshi, Hideaki Iwasaka, Junko Iizuka, Mitsuaki Maruyama, Naoya Hayashi

Author Affiliations +

Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 844105 (2012) https://doi.org/10.1117/12.979645
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan

Abstract

EUV lithography is one of the approaches to manufacture half-pitch 1x nm devices. It is required high CD mean control, high CD uniformity, and low defect density for EUV mask in common with DUV mask. In addition, backside defect density is drastically tightened to avoid overlay error in EUV scanner. PGSD (Proximity-Gap-Suction-Development), a novel development system we developed, has kept upgrading to satisfy the demand of most-advanced devices, and 3rd-generation PGSD (PGSD Gen. III) which developed for EUV mask will be contributed to achieve required accuracy of EUV mask. In this paper, we propose the concept of PGSD Gen. III and report its performance.

Citation Download Citation

Masatoshi Terayama, Hideaki Sakurai, Mari Sakai, Masamitsu Itoh, Hideo Funakoshi, Hideaki Iwasaka, Junko Iizuka, Mitsuaki Maruyama, and Naoya Hayashi "New development system for EUV mask", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844105 (29 June 2012); https://doi.org/10.1117/12.979645

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