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29 June 2012 The quality assurance of EUV mask pattern based on 3D-SEM and lithography simulation
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Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 84411C (2012)
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan
Extreme Ultra Violet (EUV) lithography is a leading candidate technology to succeed ArF lithography for high-volume manufacturing (HVM) in the next generation. A serious obstacle to the realization of EUV lithography is that the evaluation tool for EUV masks is insufficient. In particular, although the evaluation of mask pattern quality by means of an aerial image is essential for the supply of defect-free masks, timely establishment of EUV AIMS operation is difficult. We are developing a system that evaluates the printability to wafer of a mask pattern by a combination of mask pattern measurement using three-dimensional (3D) SEM and wafer image prediction using lithography simulation. The measurement of the mask pattern is a key technique of the system. It is performed by 3D-SEM, which enables the highly accurate measurement of the mask pattern sidewall angle using a tilted SEM image. Because EUV lithography is off-axis illumination on a mask pattern, the sidewall angle management of a mask pattern is important. Besides, 3D-SEM acquires a mask pattern image with high resolution and wide area. The wafer image can be predicted with high accuracy on the basis of the 3D mask pattern data, which are highly accurate and cover a wide area. In this paper, we describe the method of 3D mask pattern data measurement. Additionally, we report the experimental results concerning the 3D mask pattern measurements and the wafer image predictions.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eiji Yamanaka, Keiko Morishita, Takamasa Takaki, Masanori Takahashi, Takashi Hirano, Masamitsu Itoh, Shigeki Nojima, and Naoya Hayashi "The quality assurance of EUV mask pattern based on 3D-SEM and lithography simulation", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84411C (29 June 2012);

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