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29 June 2012 Mask process characterization of multiresolution writing
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Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 84411E (2012)
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan
Multiresolution writing refers to a technique used to simplify the data in one or more of the write passes performed by a vector-based e-beam writer while maintaining the detail in at least one of the remaining layers. This technique has been demonstrated to reduce the total shot count by as much as 30% with minimal predicted impact to the mask features formed, and no predicted impact to the wafer lithographic results. We investigate the impact of this technique on the mask manufacturing process. Specific mask parameters investigated include critical dimension uniformity, critical dimension proximity and linearity effects, line edge roughness, and mask inspectibility. Additional considerations include the applicability of this technique to existing mask designs as well as next generation RET solutions. This characterization identifies an operating regime where shot savings can be realized while still maintaining acceptable mask quality.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Timothy Lin, Jed Rankin, Yuki Fujita, Adam C. Smith, Emile Sahouria, Ahmad Elayat, Peter Thwaite, and Steffen Schulze "Mask process characterization of multiresolution writing", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84411E (29 June 2012);

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