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15 October 2012 Study of the effects of structural properties on the photoluminescence behavior of erbium thin films
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Abstract
Erbium oxide is a promising candidate for possible applications as Si-based light emitting devices in nanoscale electronics. The current report presents findings pertaining to the effects of the structural properties of erbium-based thin films on their photoluminescence characteristics. Erbium metal films were deposited on silicon via electron beam evaporation followed by thermal oxidation. The effects of post-deposition annealing conditions on the structural and optical properties of the thin films were examined using a variety of techniques, such as spectroscopic ellipsometry, xray diffraction, and x-ray photoelectron spectroscopy. It was shown that the thin films evolved as function of thermal treatment from an Er-rich to an ErO-rich (700°C) to an Er2O3-rich (900°C) phase due to an increase in oxygen incorporation with higher oxidation temperatures. At temperatures ≥ 1000°C, out-diffusion of silicon from the substrate led to the formation of erbium monosilicate. Furthermore, the photoluminescence spectra of these various phases were measured, and the correlation between structural properties and luminescence characteristics will be discussed in this paper.
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Himani S. Kamineni, Spyros Gallis, Mengbing Huang, and Alain E. Kaloyeros "Study of the effects of structural properties on the photoluminescence behavior of erbium thin films", Proc. SPIE 8463, Nanoengineering: Fabrication, Properties, Optics, and Devices IX, 84630E (15 October 2012); https://doi.org/10.1117/12.929987
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