Study on indium phosphide nanowires grown by metal organic chemical vapor deposition and coated with aluminum oxides deposited by atomic layer deposition

Andrew J. Lohn; Noel Dawson; Robert Cormia; David Fryauf; Junce Zhang; Kate J. Norris; Nobuhiko P. Kobayashi

doi:10.1117/12.930525

11 October 2012 Study on indium phosphide nanowires grown by metal organic chemical vapor deposition and coated with aluminum oxides deposited by atomic layer deposition

Andrew J. Lohn, Noel Dawson, Robert Cormia, David Fryauf, Junce Zhang, Kate J. Norris, Nobuhiko P. Kobayashi

Author Affiliations +

Proceedings Volume 8467, Nanoepitaxy: Materials and Devices IV; 84670U (2012) https://doi.org/10.1117/12.930525
Event: SPIE NanoScience + Engineering, 2012, San Diego, California, United States

Abstract

Semiconducting nanowires are promising materials for a variety of applications, many of which are in optoelectronics where their ability to use quantum confinement to tune transition energy levels and their ability to epitaxially grow on substrates with large lattice-mismatches enable unique opportunities. In addition, the large relative surface area of nanowire-based devices can be either a benefit as in, for example, sensor applications or challenges such as charge trapping, non-radiative recombination or Fermi-level pinning. In this study, indium phosphide nanowires grown by metal organic chemical vapor deposition were conformally coated with aluminum oxide by atomic layer deposition as a means of controlling the surface states within the indium phosphide region. Photoluminescence spectra from the coated nanowires show a strong blueshift and slight peak broadening as compared to uncoated nanowires despite their increased lateral dimension. This degree of blueshift is unlikely to have been caused by strain associated with the coating because of its relatively thin thickness (~10 nm), and the x-ray diffraction profiles collected from the coated nanowires do not indicate the presence of substantial lattice deformation. It is more likely to be a result of altered chemical state at the surface; the uncoated nanowires have oxygen bound to both indium and phosphorus near the surface as confirmed in our X-ray photoelectron spectroscopy studies. Subsequent aluminum oxide deposition alters surface atomic bonding thereby modifying the states electronic responsible for optical properties in the nanowires.

Citation Download Citation

Andrew J. Lohn, Noel Dawson, Robert Cormia, David Fryauf, Junce Zhang, Kate J. Norris, and Nobuhiko P. Kobayashi "Study on indium phosphide nanowires grown by metal organic chemical vapor deposition and coated with aluminum oxides deposited by atomic layer deposition", Proc. SPIE 8467, Nanoepitaxy: Materials and Devices IV, 84670U (11 October 2012); https://doi.org/10.1117/12.930525

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Nanowires

Indium

Atomic layer deposition

Coating

Metalorganic chemical vapor deposition

Oxygen

Luminescence

Show All Keywords

Keywords/Phrases

Search In:

Publication Years