N-type self-assembled monolayer field-effect transistors

Andreas Ringk; Xiaoran Li; Fatemeh Gholamrezaie; Edsger C. P. Smits; Alfred Neuhold; Armin Moser; Gerwin H. Gelinck; Roland Resel; Dago M. de Leeuw; Peter Strohriegl

doi:10.1117/12.929535

11 October 2012 N-type self-assembled monolayer field-effect transistors

Andreas Ringk, Xiaoran Li, Fatemeh Gholamrezaie, Edsger C. P. Smits, Alfred Neuhold, Armin Moser, Gerwin H. Gelinck, Roland Resel, Dago M. de Leeuw, Peter Strohriegl

Author Affiliations +

Proceedings Volume 8478, Organic Field-Effect Transistors XI; 847813 (2012) https://doi.org/10.1117/12.929535
Event: SPIE Organic Photonics + Electronics, 2012, San Diego, California, United States

Abstract

Within this work we present the synthesis and applications of a novel material designed for n-type self-assembled monolayer field-effect transistors (SAMFETs). Our novel perylene bisimide based molecule was obtained in six steps and is functionalized with a phosphonic acid linker which enables a covalent fixation on aluminum oxide dielectrics. The organic field-effect transistors (OFETs) were fabricated by submerging predefined transistor substrates in a dilute solution of the molecule under ambient conditions. Investigations showed a thickness of about 3 nm for the organic layer which is coincides to the molecular length. The transistors showed bulk-like electron mobilities up to 10^-3 cm²/Vs. Due to the absence of bulk current high on/off-ratios were achieved. An increase of the electron mobility with the channel length and XPS investigations point to a complete coverage of the dielectric with a dense monolayer. In addition, a p-type SAMFET based on a thiophene derivative and our new n-type SAMFET were combined to the first CMOS bias inverter based solely on SAMFETs.

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Andreas Ringk, Xiaoran Li, Fatemeh Gholamrezaie, Edsger C. P. Smits, Alfred Neuhold, Armin Moser, Gerwin H. Gelinck, Roland Resel, Dago M. de Leeuw, and Peter Strohriegl "N-type self-assembled monolayer field-effect transistors", Proc. SPIE 8478, Organic Field-Effect Transistors XI, 847813 (11 October 2012); https://doi.org/10.1117/12.929535

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