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11 October 2012 N-type self-assembled monolayer field-effect transistors
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Within this work we present the synthesis and applications of a novel material designed for n-type self-assembled monolayer field-effect transistors (SAMFETs). Our novel perylene bisimide based molecule was obtained in six steps and is functionalized with a phosphonic acid linker which enables a covalent fixation on aluminum oxide dielectrics. The organic field-effect transistors (OFETs) were fabricated by submerging predefined transistor substrates in a dilute solution of the molecule under ambient conditions. Investigations showed a thickness of about 3 nm for the organic layer which is coincides to the molecular length. The transistors showed bulk-like electron mobilities up to 10-3 cm2/Vs. Due to the absence of bulk current high on/off-ratios were achieved. An increase of the electron mobility with the channel length and XPS investigations point to a complete coverage of the dielectric with a dense monolayer. In addition, a p-type SAMFET based on a thiophene derivative and our new n-type SAMFET were combined to the first CMOS bias inverter based solely on SAMFETs.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas Ringk, Xiaoran Li, Fatemeh Gholamrezaie, Edsger C. P. Smits, Alfred Neuhold, Armin Moser, Gerwin H. Gelinck, Roland Resel, Dago M. de Leeuw, and Peter Strohriegl "N-type self-assembled monolayer field-effect transistors", Proc. SPIE 8478, Organic Field-Effect Transistors XI, 847813 (11 October 2012);

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