Generation of Si3N4 layers for laser applications

J. Landrock; M. Zeuner; M. Nestler; D. Rost; Marc Kelemen; Sascha Hilzensauer

doi:10.1117/12.930440

11 October 2012 Generation of Si₃N₄ layers for laser applications

J. Landrock, M. Zeuner, M. Nestler, D. Rost, Marc Kelemen, Sascha Hilzensauer

Proceedings Volume 8486, Current Developments in Lens Design and Optical Engineering XIII; 84860Y (2012) https://doi.org/10.1117/12.930440
Event: SPIE Optical Engineering + Applications, 2012, San Diego, California, United States

Abstract

The opportunities of film deposition by means of microwave plasma using plasma enhanced chemical vapor deposition (PECVD) will be discussed and the necessary process equipment presented. The AK series of MicroSystems GmbH is a platform for processing single substrates and is suitable for a variety of high-end applications. One possible application, the generation of passivation layers in the production of edge emitting diode lasers, is presented and discussed. By means of this application, the advantages of microwave plasmas are highlighted.

Citation Download Citation

J. Landrock, M. Zeuner, M. Nestler, D. Rost, Marc Kelemen, and Sascha Hilzensauer "Generation of Si₃N₄ layers for laser applications", Proc. SPIE 8486, Current Developments in Lens Design and Optical Engineering XIII, 84860Y (11 October 2012); https://doi.org/10.1117/12.930440

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