Paper
11 October 2012 Innovative guided mode method for measuring the penetration depth in partially exposed photo-resist layers
Thomas Wood, Vincent Brissonneau, Jean-Baptiste Brückner, Gérard Berginc, François Flory, Judikaël Le Rouzo, Ludovic Escoubas
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Abstract
The “m-lines” guided mode method has been employed as a new approach to measure the penetration depth of UV light in partially exposed thin film photoresist layers. This non-destructive method presents the advantage that the penetration depth can be measured before developing the sample, allowing for fine tuning of exposure parameters. Results are presented for a positive photoresist (Shipley S1813) deposited by spin coating onto glass slides, forming layers approximately 2.2μm thick. Such films are exposed to varying degrees with a programmable UV exposure tool. Using the “m-lines” technique, light is coupled into the photoresist samples using a prism coupler in close proximity to the sample surface. This coupling occurs for specific incident angles, known as synchronous angles, which depend on the sample structure. By measuring two such incident angles, one can calculate the thickness and refractive index of a homogeneous film. We propose a two layer model which allows us to extract the thickness and the refractive index of the upper exposed layer from the synchronous angles provided by the “m-lines” technique.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Wood, Vincent Brissonneau, Jean-Baptiste Brückner, Gérard Berginc, François Flory, Judikaël Le Rouzo, and Ludovic Escoubas "Innovative guided mode method for measuring the penetration depth in partially exposed photo-resist layers", Proc. SPIE 8486, Current Developments in Lens Design and Optical Engineering XIII, 84860Z (11 October 2012); https://doi.org/10.1117/12.928692
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KEYWORDS
Photoresist materials

Refractive index

Prisms

Radio propagation

Thin films

Glasses

Ultraviolet radiation

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