Paper
15 October 2012 High-sensitivity submillimeter wave detector module implementing InP-based zero-biased Schottky-barrier diode
Hiroshi Ito, Yoshifumi Muramoto, Hiroshi Yamamoto, Tadao Ishibashi
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Abstract
A sub-millimeter(mm)-wave detector module implementing an InP-based zero-biased Schottky-barrier diode (SBD) has been fabricated. The SBD is monolithically integrated with a short-stub resonant matching circuit for increasing the detection sensitivity as well as providing a biasing circuit. The SBD chip is mounted in a compact J-band (WR-3) rectangular-waveguide-input module for practical use. The module exhibits a peak sensitivity at around 350 GHz due to the characteristics of the matching circuit, and a good linearity of the output voltage against the input sub-mm-wave power. A record sensitivity of 1460 V/W is obtained for the InP-based zero-biased SBD at 350 GHz.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Ito, Yoshifumi Muramoto, Hiroshi Yamamoto, and Tadao Ishibashi "High-sensitivity submillimeter wave detector module implementing InP-based zero-biased Schottky-barrier diode", Proc. SPIE 8496, Terahertz Emitters, Receivers, and Applications III, 84960K (15 October 2012); https://doi.org/10.1117/12.928702
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KEYWORDS
Waveguides

Sensors

Diodes

Signal detection

Antennas

Extremely high frequency

Photonics

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