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15 October 2012 Testing of CMOS devices in NIF's harsh neutron environment
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Abstract
Vendor supplied CMOS sensors were exposed to 14 MeV neutrons on yield shots in NIF and examined for damage. The sensors were exposed to multiple shots with a maximum fluence on one of the sensors of 4.3E11 n/cm2. The results of post-shot testing will be presented. LLNL is investigating the suitability of CMOS imaging sensors for use in the camera of the ARIANE diagnostic which will mitigate the effects of the NIF neutron environment by dumping photoelectrons during the neutron pulse and then recording an image stored on a long persistence phosphor.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alan T. Teruya, Perry M. Bell, Scott Burns, Chris Hagmann, James D. Moody, and Mike Richardson "Testing of CMOS devices in NIF's harsh neutron environment", Proc. SPIE 8505, Target Diagnostics Physics and Engineering for Inertial Confinement Fusion, 85050C (15 October 2012); https://doi.org/10.1117/12.930132
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