Translator Disclaimer
15 October 2012 Testing of CMOS devices in NIF's harsh neutron environment
Author Affiliations +
Vendor supplied CMOS sensors were exposed to 14 MeV neutrons on yield shots in NIF and examined for damage. The sensors were exposed to multiple shots with a maximum fluence on one of the sensors of 4.3E11 n/cm2. The results of post-shot testing will be presented. LLNL is investigating the suitability of CMOS imaging sensors for use in the camera of the ARIANE diagnostic which will mitigate the effects of the NIF neutron environment by dumping photoelectrons during the neutron pulse and then recording an image stored on a long persistence phosphor.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alan T. Teruya, Perry M. Bell, Scott Burns, Chris Hagmann, James D. Moody, and Mike Richardson "Testing of CMOS devices in NIF's harsh neutron environment", Proc. SPIE 8505, Target Diagnostics Physics and Engineering for Inertial Confinement Fusion, 85050C (15 October 2012);


IR CMOS: infrared enhanced silicon imaging
Proceedings of SPIE (June 11 2013)
A high resolution hand-held focused beam profiler
Proceedings of SPIE (May 16 2017)
The key technology and research progress of CMOS image sensor
Proceedings of SPIE (February 02 2009)
CMOS sensor for RSI applications
Proceedings of SPIE (November 09 2012)
Imaging CSP a die size optical package for CMOS...
Proceedings of SPIE (May 15 2000)
Solid state image sensor: technologies and applications
Proceedings of SPIE (June 18 1998)

Back to Top