Silicon [i]pin[/i] diodes for remote sensing

Ernest Robinson; Arvind D'Souza; Phil Ely; Craig Yoneyama

doi:10.1117/12.970311

15 October 2012 Silicon pin diodes for remote sensing

Ernest Robinson, Arvind D'Souza, Phil Ely, Craig Yoneyama

Proceedings Volume 8512, Infrared Sensors, Devices, and Applications II; 85120Q (2012) https://doi.org/10.1117/12.970311
Event: SPIE Optical Engineering + Applications, 2012, San Diego, California, United States

Abstract

Silicon photon detectors and focal plane arrays (FPAs) are fabricated in many varieties^1,2. Their function depends on the detector architecture, dopants, and operating temperature. DRS has fabricated silicon pin detectors that cover the visible spectral range and blocked impurity band (BIB) detectors that cover the very-long-wavelength infrared (VLWIR) region³. Imaging arrays of silicon pin-diodes utilize the intrinsic bandgap of silicon to provide high photo response over the 0.4 – 1.0 μm spectral range. The detectors operate at or near room temperature as required. Silicon pin-diode arrays are particularly attractive as an alternative to charge-coupled devices (CCDs) for space applications where radiation hardening is needed. Pros and cons of CCD and pin diode architectures are listed in Reference⁴.

Citation Download Citation

Ernest Robinson, Arvind D'Souza, Phil Ely, and Craig Yoneyama "Silicon pin diodes for remote sensing", Proc. SPIE 8512, Infrared Sensors, Devices, and Applications II, 85120Q (15 October 2012); https://doi.org/10.1117/12.970311

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KEYWORDS

Sensors

Quantum efficiency

Silicon

Modulation transfer functions

Diodes

Staring arrays

PIN photodiodes

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