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8 November 2012 Cold-development tool and technique for the ultimate resolution of ZEP520A to fabricate an EB master mold for nano-imprint lithography for 1Tbit/inch2 BPM development
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Abstract
Cold-development is well-known for resolution enhancement on ZEP520A. Dipping a wafer in a developer solvent chilled by a freezer, such a typical method had been employed. But, it is obvious that the dip-development method has several inferiorities such as developer temperature instability, temperature inconsistency between developer and a wafer, water-condensation on drying. We then built a single wafer spin-develop tool, and established a process sequence, to solve those difficulties. And, we tried to see their effect down to -10degC over various developers. In specific, we tried to make hole patterns in hexagonal closest packing in 40nm, 35nm, 30nm, 25nm pitch, and examined holes pattern quality and resolution limit by varying setting temperature from room temperature to -10degC in the cold-development, as well as varying developer chemistry from the standard developer ZED N-50 (n-amyl acetate, 100%) to MiBK and IPA mixture which was a rinsing solvent mixture originally. We also examined the other developer (poor solvent mixture) we designed, N-50 and fluorocarbon (FC) mixture, MiBK and FC mixture, and IPA+FC mixture. This paper describes cold-development tool and technique, and its results down to minus (-) 10degC, for ZEP520A resolution enhancement to obtain 1Xnm bits (holes) in 25nm pitch to fabricate an EB master mold for Nano-Imprinting Lithography for 1Tbit/in2 bit patterned media (BPM) in HDD development and production.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideo Kobayashi, Hiromasa Iyama, Takeshi Kagatsume, and Tsuyoshi Watanabe "Cold-development tool and technique for the ultimate resolution of ZEP520A to fabricate an EB master mold for nano-imprint lithography for 1Tbit/inch2 BPM development", Proc. SPIE 8522, Photomask Technology 2012, 852208 (8 November 2012); https://doi.org/10.1117/12.973668
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