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8 November 2012 Comparison of critical dimension measurements of a mask inspection system with a CD-SEM
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Abstract
Critical dimension uniformity (CDU) is an important parameter for photomask and wafer manufacturing. In order to reduce long-range CD variation, compensation techniques for mask writers and scanners have been developed. Both techniques require mask CD measurements with high spatial sampling. Scanning electron microscopes (SEMs), which provide CD measurements at very high precision, cannot in practice provide the required spatial sampling due to their low speed. In contrast mask inspection systems, some of which have the ability to perform optical CD measurements with very high sampling frequencies, are an interesting alternative. In this paper we evaluate the CDU measurement results with those of a CD-SEM.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan P. Heumann, Albrecht Ullrich, Clemens S. Utzny, Stefan Meusemann, Frank Kromer, John M. Whittey, Edgardo Garcia, Mark Wagner, and Norbert J. Schmidt "Comparison of critical dimension measurements of a mask inspection system with a CD-SEM", Proc. SPIE 8522, Photomask Technology 2012, 85220G (8 November 2012); https://doi.org/10.1117/12.977248
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