Advanced photomask fabrication process to increase pattern reliability for sub-20nm node

Dong Il Shin; Sang Jin Jo; Hee Yeon Jang; Yun Ki Hong; Dae Ho Hwang; Chung Seon Choi; Dong Sik Jang; Ho Yong Jung; Tae Joong Ha; Sang Pyo Kim; Dong Gyu Yim

doi:10.1117/12.964974

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8 November 2012 Advanced photomask fabrication process to increase pattern reliability for sub-20nm node

Dong Il Shin, Sang Jin Jo, Hee Yeon Jang, Yun Ki Hong, Dae Ho Hwang, Chung Seon Choi, Dong Sik Jang, Ho Yong Jung, Tae Joong Ha, Sang Pyo Kim, Dong Gyu Yim

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Proceedings Volume 8522, Photomask Technology 2012; 85220R (2012) https://doi.org/10.1117/12.964974
Event: SPIE Photomask Technology, 2012, Monterey, California, United States

Abstract

As technical advances continue, the pattern size of semiconductor circuit has been shrunk. So the field of the photomask needs the processing more strictly. It is critical to the photomask which contained considerably shrank circuit and ultra high density pattern for sub-20 nm tech device, although a small defect is negligible in the conventional process. Even if some defect can be repaired, it is not satisfied with a strict pattern specification. Stricter fabrication process and pattern specification increase the manufacture cost. Furthermore, EUV photomask manufacture cost is several times expensive than the conventional photomask. Therefore the effort to decrease defects is important for the photomask fabrication process. In addition, when defects are generated, it is obviously important that the repaired patterns have better pattern reliability. In this paper, we studied about advanced processes that control and remove hard defects minutely .on ArF attenuated phase-shift mask. This study was accomplished for 4 areas. First of all, we developed advanced Mosi etch process. Defects are generated under this etch process are not fatal. The thickness of hard defects were controlled thinner under this etch process compared with conventional etch process. Secondly, we studied cleaning process that has good performance on Cr : MoSi surface and a poor hydrophilic contrast to control side effect by etch process. Thirdly, we made inspection technique for detecting thin thickness hard defects. Lastly, we researched a repair technology that is effective in hard defects of thin thickness. The performance of the repaired pattern was verified by AIMS. In this study, it is researched that control shape, properties of defects to prepare a reliable repair and improved repaired photomask pattern reliability by 30% over.

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Dong Il Shin, Sang Jin Jo, Hee Yeon Jang, Yun Ki Hong, Dae Ho Hwang, Chung Seon Choi, Dong Sik Jang, Ho Yong Jung, Tae Joong Ha, Sang Pyo Kim, and Dong Gyu Yim "Advanced photomask fabrication process to increase pattern reliability for sub-20nm node", Proc. SPIE 8522, Photomask Technology 2012, 85220R (8 November 2012); https://doi.org/10.1117/12.964974

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