EUVL mask inspection at Hydrogen Lyman Alpha

Thiago S. Jota; Tom D. Milster

doi:10.1117/12.977205

8 November 2012 EUVL mask inspection at Hydrogen Lyman Alpha

Thiago S. Jota, Tom D. Milster

Proceedings Volume 8522, Photomask Technology 2012; 85221V (2012) https://doi.org/10.1117/12.977205
Event: SPIE Photomask Technology, 2012, Monterey, California, United States

Abstract

Mask inspection is an outstanding challenge for Extreme Ultra-Violet Lithography (EUVL). The purpose of this investigation is to compare imaging characteristics of ArF and KrF inspection sources to imaging characteristics using a source at the Lyman-alpha line of Hydrogen at 121.6nm (HLA). HLA provides a raw resolution improvement of 37% to ArF and 51% to KrF, based on proportional wavelength scaling. The HLA wavelength is in an atmospheric transmission window, so a vacuum environment is not required. Our comparison uses rigorous vector imaging techniques to simulate partially coherent illumination schemes and reasonably accurate mask material properties and dimensions. Contrast is evaluated for representative spatial frequencies. Imaging and detection of defects are also considered with NILS and MEEF. The goal is high throughput inspection with maximum resolution, contrast, and sensitivity.

Citation Download Citation

Thiago S. Jota and Tom D. Milster "EUVL mask inspection at Hydrogen Lyman Alpha", Proc. SPIE 8522, Photomask Technology 2012, 85221V (8 November 2012); https://doi.org/10.1117/12.977205

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