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19 November 2012 Evaluation of very long wave p-on-n MCT FPAs for space applications
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Developments made last years at CEA-LETI on p-on-n planar HgCdTe (MCT) photodiodes technology on long-, midand short-wavelength led to the manufacture of focal plane arrays (FPA) demonstrators with high performances. Improvements have been done on both technology and process to index very long-wavelength spectral band. Such detectors is currently being evaluated for space applications such as IASI-NG [1] or EChO [2] as they give the opportunity to address low flux detection conditions or higher operating temperature (lowering the electrical power consumption). Various process settings were tested to find optimized conditions in order to obtain the best detector performances. Cutoff wavelength of the manufactured detectors ranges from 9.5 to 15.5 μm at 78K. MCT base layer has been grown by liquid phase epitaxy (LPE) on lattice matched CdZnTe. The n-type doping is achieved during epitaxy by Indium incorporation. Planar p-on-n photodiodes were manufactured by Arsenic incorporation using ion-implantation and activation is done by post-implantation annealing under Hg overpressure. Electro-optical characterizations were performed both on test arrays and FPAs. Results show excellent operabilities (over 99.9% with ±0.5×mean value criterion) in responsivity and NETD. Measured RMS noise of the photodiodes is comparable to calculated current shot noise. The dark current is following the well-known Rule07 for every component and on a large temperature range.
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N. Baier, L. Mollard, O. Gravrand, G. Bourgeois, J.-P. Zanatta, and G. Destefanis "Evaluation of very long wave p-on-n MCT FPAs for space applications", Proc. SPIE 8533, Sensors, Systems, and Next-Generation Satellites XVI, 853315 (19 November 2012);


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