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8 November 2012 Power scaling of high-power optically pumped semiconductor lasers for continuous wave and ultrashort pulse generation
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Abstract
We report on our research in power scaling OPSL around 1 μm to exceed 100W per chip by combining a rigorous quantum design of an optimized MQW epitaxial structure, highly accurate and reproducible wafer growth and an efficient thermal management strategy. Recently we have utilized these state-of-the-art optimized OPSL chips to achieve a new record for a mode-locked OPSL with an intra-cavity SESAM. The average output power of the laser in the optimum operation point of mode-locked operation was 5.1W while being pumped with 25W of net pump power. This corresponds to a pulse energy of 3 nJ and a pulse peak power of 3.8 kW.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandre Laurain, Maik Scheller, Tsuei-Lian Wang, Jorg Hader, Jerome V. Moloney, Stephan W. Koch, Bernd Heinen, Martin Koch, Bernardette Kunert, and Wolfgang Stolz "Power scaling of high-power optically pumped semiconductor lasers for continuous wave and ultrashort pulse generation", Proc. SPIE 8547, High-Power Lasers 2012: Technology and Systems, 85470I (8 November 2012); https://doi.org/10.1117/12.976979
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