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15 October 2012 Fabrication and characterization of high mobility spin-coated zinc oxide thin film transistors
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492H (2012) https://doi.org/10.1117/12.927425
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
A ZnO based thin film transistor (TFT) with bottom-gate configuration and SiO2 as insulating layer has been fabricated and characterized. The ZnO thin film was prepared by spin coating the sol-gel solution on the p-type Si wafers. The optical and structural properties of ZnO films were investigated using UV measurements and scanning electron microscope (SEM). The result of UV-visible study confirms that the films have a good absorbance in UV region and relatively low absorbance in the visible region. The TFT exhibited an off-current of 2.5×10-7 A. The values of field effect channel mobility and on/off current ratio extracted for the device, measured 11 cm2/V.s and ~102 respectively. The value of threshold voltage was found to be 1.3 V.
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Shaivalini Singh and P. Chakrabarti "Fabrication and characterization of high mobility spin-coated zinc oxide thin film transistors", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492H (15 October 2012); https://doi.org/10.1117/12.927425
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