Paper
15 October 2012 SiC light emitting quantized structures on silicon by spin-on technique
Author Affiliations +
Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492X (2012) https://doi.org/10.1117/12.927427
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
SiC nanocrystals of size 4×30×40nm have been fabricated on Si (100)3° by a low cost spin-on technique in which Htermination produces smaller crystallites but larger crystallite density at the substrate surface steps. Low temperature photoluminescence and atomic force microscopy (AFM) confirms the formation of quantum dashes. It has been observed that the spin speed and H-termination plays a crucial role in the formation of quantized structures on Si.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deepak Jain, Chatti Rama Sandeep, and Utpal Das "SiC light emitting quantized structures on silicon by spin-on technique", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492X (15 October 2012); https://doi.org/10.1117/12.927427
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KEYWORDS
Silicon carbide

Silicon

Lamps

Atomic force microscopy

Nanostructures

Fabrication

Luminescence

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