Paper
15 October 2012 Effect of Si, Sc, Cr doping on the structural, optical and discharge characteristics of MgO thin films as protective layer for plasma display panels
Chandra Bhal Singh, U. K. Barik, Surajit Sarkar, Vandana Singh, Sanjay K. Ram, Harish K. Dwivedi, Satyendra Kumar
Author Affiliations +
Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492Y (2012) https://doi.org/10.1117/12.928027
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
We report the effect of Si, Cr, Sc doping in the crystalline structure, optical and discharge characteristics of MgO thin films. Silicon and multiple (Si, Cr, Sc) doped MgO thin films demonstrate higher secondary electron emission (SEE). Si doping with Cr and Sc doping in MgO films shows much higher SEE as compared to pure and only Si doped MgO films. The importance of optimum amount of Sc doping is seen in our study where SEE reduced with further increase in Sc doping. The structural attributes of MgO films are correlated to the observed changes in discharge characteristics in the context of varying amount of Si, Sc, and Cr doping.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chandra Bhal Singh, U. K. Barik, Surajit Sarkar, Vandana Singh, Sanjay K. Ram, Harish K. Dwivedi, and Satyendra Kumar "Effect of Si, Sc, Cr doping on the structural, optical and discharge characteristics of MgO thin films as protective layer for plasma display panels", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492Y (15 October 2012); https://doi.org/10.1117/12.928027
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KEYWORDS
Doping

Silicon

Chromium

Thin films

Plasma display panels

Plasma

Glasses

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