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15 October 2012 Growth of nanocrystalline silicon films by VHF PECVD
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85493C (2012) https://doi.org/10.1117/12.926986
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited using very high frequency (VHF) plasma enhanced chemical vapor deposition (PECVD) technique at 60 MHz. Films were grown at different power from 5 W to 40 W. The maximum deposition rate was found to be 6.1 A0/sec at 20 W power. These films were characterized by XRD which revealed that the size of the Si nanocrystals are in the range of 15.7 to 19.6 A0. The optical band gap was found in the range between 1.64 to 1.74 eV.
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Jhuma Gope, Sushil Kumar, Sukhbir Singh, C. M. S Rauthan, and P. C. Srivastava "Growth of nanocrystalline silicon films by VHF PECVD", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493C (15 October 2012); https://doi.org/10.1117/12.926986
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