Characterization of silicide-silicon interface contact resistivity using 1-D dual transmission line model approximation of modified cross bridge kelvin measurements

Ankr Arya; Balaji Jayaraman; Mohit Bajaj; Abhisek Dixit; Cung Tran

doi:10.1117/12.924514

15 October 2012 Characterization of silicide-silicon interface contact resistivity using 1-D dual transmission line model approximation of modified cross bridge kelvin measurements

Ankr Arya, Balaji Jayaraman, Mohit Bajaj, Abhisek Dixit, Cung Tran

Author Affiliations +

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85493J (2012) https://doi.org/10.1117/12.924514
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

Conventional 1D single level transmission line model (TLM) to extract silicide-silicon contact resistivity does not take into account silicide sheet resistance. In this paper, 1D dual level TLM model approximation is used for extraction of the silicide sheet resistance and silicide-silicon contact resistivity. Experiments involving Platinum content increase in Nickel Silicide and pre-silicide Carbon implant in Silicon Germanium (SiGe) PMOS is analyzed using our model.

Citation Download Citation

Ankr Arya, Balaji Jayaraman, Mohit Bajaj, Abhisek Dixit, and Cung Tran "Characterization of silicide-silicon interface contact resistivity using 1-D dual transmission line model approximation of modified cross bridge kelvin measurements", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493J (15 October 2012); https://doi.org/10.1117/12.924514

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