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29 November 2012 The characteristics of spectral in vertical-cavity surfacing-emitting lasers based on defect layer structure
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Abstract
Based on the band gap theory, a dual-wavelength VCSELs with same direction, equal-intensity, high-Q program is presented. The wavelengths of the VCSEL can be located with the aid of the Al0.8Ga0.2As defect layer in 1D photonic crystal structure. The results indicated that one-dimensional PC with a sheet of defect layer provides a parent structure on which laser beam can be well engineered without the expense of the macroscopic structural integrity.
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B. L. Guan, G. Z. Shi, Q. Wang, X. Guo, and G. D. Shen "The characteristics of spectral in vertical-cavity surfacing-emitting lasers based on defect layer structure", Proc. SPIE 8552, Semiconductor Lasers and Applications V, 855209 (29 November 2012); https://doi.org/10.1117/12.979656
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